Product Summary

The M29F200BB-70M1 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCC supply.

Parametrics

M29F200BB-70M1 absolute maximum ratings: (1)Temperature Under Bias: –50 to 125 °C; (2)TSTG Storage Temperature: –65 to 150 °C; (3); (4)Input or Output Voltages: –0.6 to 7 V; (5)VCC Supply Voltage: –0.6 to 7 V.

Features

M29F200BB-70M1 features: (1)5v ± 10% supplyvoltagefor program, erase and read operations; (2)fastaccess time: 70ns; (3)fastprogramming time: 10ms typical; (4)program/erase controller (p/e.c.).

Diagrams

M29F200BB-70M1 block diagram

M29F002B
M29F002B

Other


Data Sheet

Negotiable 
M29F002BB
M29F002BB

Other


Data Sheet

Negotiable 
M29F002BB70K1
M29F002BB70K1

STMicroelectronics

Flash 2M (256Kx8) 70ns

Data Sheet

Negotiable 
M29F002BB70K6
M29F002BB70K6

STMicroelectronics

Flash 2M (256Kx8) 70ns

Data Sheet

Negotiable 
M29F002BB70K6E
M29F002BB70K6E


IC FLASH 2MBIT 70NS 32PLCC

Data Sheet

Negotiable 
M29F002BB70N1
M29F002BB70N1

STMicroelectronics

Flash 2M (256Kx8) 70ns

Data Sheet

Negotiable