Product Summary

The EDE2516AEBG-6E-E is a 256M bits DDR2 SDRAM.

Parametrics

EDE2516AEBG-6E-E absolute maximum ratings: (1)Power supply voltage VDD: -1.0 to +2.3 V ; (2)Power supply voltage for output VDDQ: -0.5 to +2.3 V; (3)Power supply voltage for DLL VDDL: -0.5 to +2.3 V ; (4)Input voltage VIN: -0.5 to +2.3 V.

Features

EDE2516AEBG-6E-E features: (1)Double-data-rate architecture; two data transfers per clock cycle; (2)The high-speed data transfer is realized by the 4 bits; (3)prefetch pipelined architecture; (4)Bi-directional differential data strobe (DQS and /DQS); (5)is transmitted/received with data for capturing data at the receiver; (6)DQS is edge-aligned with data for READs; centeraligned with data for WRITEs; (7)Differential clock inputs (CK and /CK).

Diagrams

EDE2516AEBG-6E-E block diagram

EDE2104ABSE
EDE2104ABSE

Other


Data Sheet

Negotiable 
EDE2108ABSE
EDE2108ABSE

Other


Data Sheet

Negotiable 
EDE2116ABSE
EDE2116ABSE

Other


Data Sheet

Negotiable 
EDE2508ABSE
EDE2508ABSE

Other


Data Sheet

Negotiable 
EDE2508ABSE-GE
EDE2508ABSE-GE

Other


Data Sheet

Negotiable 
EDE2508AEBG
EDE2508AEBG

Other


Data Sheet

Negotiable